DOAJ Open Access 2025

Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS

Patrick Diehle Stephan Gierth Mickael Lejoyeux Karen Geens Matteo Borga +1 lainnya

Abstrak

The measurement of doping concentrations is a fundamental need for the development and processing of power electronic devices like normally-off semi-vertical GaN trench MOSFETs. We employed highly laterally resolved TOF-SIMS to evaluate the doping levels of the n- and p- doped layers close to the gate trench. A lateral resolution of approx. 100 nm was achieved sufficient to resolve the gate trench geometry. Furthermore, the analysis and the visualization of the 3D data was optimized by implementing the correction of the topography and image distortions. No change of the Mg and Si doping of the n- and p- layers close to gate trench sidewall was observed.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks

Penulis (6)

Patrick Diehle

Stephan Gierth

Mickael Lejoyeux

Karen Geens

Matteo Borga

Frank Altmann

Format Sitasi

APA MLA BibTeX

Diehle, P., Gierth, S., Lejoyeux, M., Geens, K., Borga, M., Altmann, F. (2025). Doping investigation of structured GaN devices by highly lateral resolved TOF-SIMS. https://doi.org/10.1016/j.pedc.2025.100082

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.1016/j.pedc.2025.100082
Akses: Open Access ✓