DOAJ Open Access 2023

ICeGaNTM technology: The easy-to-use and self-protected GaN power IC

Giorgia Longobardi Loizos Efthymiou John Findlay Andrea Bricconi Peter Comiskey +3 lainnya

Abstrak

This work provides an overview of the current state of technology in the field of lateral GaN power devices and presents the characteristics of the main commercially available 650 V GaN power devices and ICs. A comparison is given, both in terms of key parameters as well as of the availability of complex functionality through integration of additional smart features. The features of our new technology, termed ICeGaN™, are presented in this context, focusing on the benefits that may be derived when ICeGaN™ devices are used in common applications. ICeGaN™ is a new concept of a smart HEMT which offers ease-of-use, sensing and protection functions without sacrificing performance.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks

Penulis (8)

Giorgia Longobardi

Loizos Efthymiou

John Findlay

Andrea Bricconi

Peter Comiskey

Martin Arnold

David Miller

Florin Udrea

Format Sitasi

APA MLA BibTeX

Longobardi, G., Efthymiou, L., Findlay, J., Bricconi, A., Comiskey, P., Arnold, M. et al. (2023). ICeGaNTM technology: The easy-to-use and self-protected GaN power IC. https://doi.org/10.1016/j.pedc.2022.100028

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Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1016/j.pedc.2022.100028
Akses: Open Access ✓