Enhancing photoelectrochemical surface reactivity through interface grafting of g-C3N4 quantum dots with BiVO4

Due to the high photosensitivity, quantum dots (QDs) offer promise in establishing heterojunctions to improve the photoelectrochemical (PEC) water oxidation process and enhance the solar-to-hydrogen conversion efficiency. However, apart from their catalytic capacity, additional protection strategies should be considered to eliminate the destruction of QDs from electrolytes and photo-corrosion. Here, we present a facile strategy to fabricate heterojunction by employing graphitic carbon nitride QDs (g-C3N4 QDs) coupled with BiVO4, referred to CNQDs/BiVO4. With the help of CNQDs, a gradient energy band alignment has been established in CNQDs/BiVO4, leading to facilitated hole migration driven by an upward force. The optimal CNQDs/BiVO4 sample shows significantly enhanced PEC performance for water oxidation, with a photocurrent of 2.2 mA/cm2 at 1.23 V vs. RHE (reversible hydrogen electrode), which is about 2.26 times better than that of BiVO4 (0.97 mA/cm2). The enhanced PEC performance could be attributed to the increased surface-active area and facilitated surface oxidation kinetics.