DOAJ Open Access 2020

Exposure of AlN and Al2O3 to low energy D and He plasmas

M.I. Patino R.P. Doerner G.R. Tynan

Abstrak

Aluminum nitride (AlN) and aluminum oxide (Al2O3) were exposed to deuterium (D) and helium (He) plasma in the PISCES-A linear plasma device using RF biasing of the sample manipulator to set the incident ion energy (16–100 eV, 0.7–12 × 1025 m−2, <600 K). Preferential sputtering of nitrogen was detected for D and He exposed AlN samples, resulting in Al enrichment at the surface (i.e., Al/N ~2–3). The Al-enriched region was limited to the uppermost ~20 nm, independent of fluence, and was eliminated by exposure to plasma seeded with nitrogen. No Al enrichment was observed for the Al2O3 samples exposed to pure D or He. Results suggest AlN and Al2O3 are promising candidates as plasma facing materials in magnetic fusion and RF plasma devices (e.g., as electrical standoffs and RF heating windows).

Topik & Kata Kunci

Nuclear engineering. Atomic power

Penulis (3)

M.I. Patino

R.P. Doerner

G.R. Tynan

Format Sitasi

APA MLA BibTeX

Patino, M., Doerner, R., Tynan, G. (2020). Exposure of AlN and Al2O3 to low energy D and He plasmas. https://doi.org/10.1016/j.nme.2020.100753

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Informasi Jurnal

Tahun Terbit: 2020
Sumber Database: DOAJ
DOI: 10.1016/j.nme.2020.100753
Akses: Open Access ✓