DOAJ Open Access 2023

Performance analysis of OTFT-based SRAM topologies

Taniza Marium S.M. Ishraqul Huq Oli Lowna Baroi Md. Shaikh Abrar Kabir Satyendra N. Biswas

Abstrak

In terms of mechanical flexibility, organic SRAM offers better designs and a commercially feasible option with the ability to deliver acceptable performance. This paper investigates the implementation of different SRAM topologies based on organic thin film transistors (OTFTs). In this work, a compact spice model is used to simulate pOTFT and nOTFT in LTSpice software. Time delays, power consumption, the power delay product (PDP), and static noise margin (SNM) for read and write operations are calculated, and a comparative analysis of OTFT based 6T, 7T, 8T, and 9T SRAM topologies is performed. Among different topologies, 9T OTFT SRAM cell achieves a 1.67× increase in SNM, compared to conventional 6T OTFT-based SRAM cell. The highest figure of merit value of 9T SRAM cell indicates its suitability for various applications.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Computer engineering. Computer hardware

Penulis (5)

Taniza Marium

S.M. Ishraqul Huq

Oli Lowna Baroi

Md. Shaikh Abrar Kabir

Satyendra N. Biswas

Format Sitasi

APA MLA BibTeX

Marium, T., Huq, S.I., Baroi, O.L., Kabir, M.S.A., Biswas, S.N. (2023). Performance analysis of OTFT-based SRAM topologies. https://doi.org/10.1016/j.memori.2023.100077

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Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1016/j.memori.2023.100077
Akses: Open Access ✓