DOAJ Open Access 2023

Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET

Masud Rana Sk Shubham Pande Franz Müller Yannick Raffel Maximilian Lederer +6 lainnya

Abstrak

In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations. We have considered the presence of fixed charges at the interface between the ferroelectric layer (FE) and the interlayer dielectric (IL) of FeFET with metal/ferroelectric/interlayer/Si (MFIS) gate structure. Our study indicates that the presence of fixed charges affects the polarization and corresponding depolarization field in the ferroelectric. Positive and negative interface charges can align the polarization direction. The MW degradation is observed with the increase in the fixed charge concentration (Qf).

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Computer engineering. Computer hardware

Penulis (11)

Masud Rana Sk

Shubham Pande

Franz Müller

Yannick Raffel

Maximilian Lederer

Luca Pirro

Sven Beyer

Konrad Seidel

Thomas Kämpfe

Sourav De

Bhaswar Chakrabarti

Format Sitasi

APA MLA BibTeX

Sk, M.R., Pande, S., Müller, F., Raffel, Y., Lederer, M., Pirro, L. et al. (2023). Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET. https://doi.org/10.1016/j.memori.2023.100050

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Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1016/j.memori.2023.100050
Akses: Open Access ✓