DOAJ Open Access 2023

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Yannick Raffel Franz Müller Sunanda Thunder Masud Rana Sk Maximilian Lederer +6 lainnya

Abstrak

In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-based ferroelectric field effect transistor devices for synaptic applications. The devices under test were fabricated on 300 mm wafers at GlobalFoundries. The fabricated devices demonstrate 103WRITE-endurance cycles and 104seconds of data-retention capability at 85 °C. We have also assessed the FeFET-based crossbar array’s performance in system-level applications. The system performance was assessed by simulating the FeFET crossbar array for neuromorphic applications. For datasets from the National Institute of Standards and Technology (MNIST), the crossbar array achieved software-comparable inference accuracy of about 97% using multilayer perceptron (MLP) neural networks.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Computer engineering. Computer hardware

Penulis (11)

Yannick Raffel

Franz Müller

Sunanda Thunder

Masud Rana Sk

Maximilian Lederer

Luca Pirro

Sven Beyer

Konrad Seidel

Bhaswar Chakrabarti

Thomas Kämpfe

Sourav De

Format Sitasi

APA MLA BibTeX

Raffel, Y., Müller, F., Thunder, S., Sk, M.R., Lederer, M., Pirro, L. et al. (2023). 28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview. https://doi.org/10.1016/j.memori.2023.100048

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Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1016/j.memori.2023.100048
Akses: Open Access ✓