DOAJ Open Access 2026

Amorphous Ga2O3 and Temperature‐Tolerant Solar‐Blind Ultraviolet Photodetectors for Extreme Environments

Peiran Xu Tiantian Huang Qingzi Li Zhixuan Wu Wanli Yang +3 lainnya

Abstrak

ABSTRACT Environment‐adaptabilities are always critical for optical and electrical components while Ga2O3 thin films have been attractive in UV photodetectors, flexible optoelectronics and multifunctional integrations. Here, we present the atomic‐layer deposited amorphous Ga2O3 thin films and the solar‐blind UV photodetectors with temperature‐adaptabilities across a wide temperature range of 100–450 K. The devices exhibit an excellent responsivity (∼3.99 mA/W) and detectivity (∼1.19 × 1011 Jones) at 120 K, and remain operational during temperature changes between 100 and 450 K. The distinct non‐monotonic variations that were observed in the UV photoresponses may originate from the thermal‐driven evolution of oxygen‐vacancy‐related trap states. We believe that these investigations will provide an alternative approach to understanding amorphous Ga2O3 thin films and temperature‐tolerant devices, and exploring reliable integration used for sensing and observation under extreme environment changes.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (8)

Peiran Xu

Tiantian Huang

Qingzi Li

Zhixuan Wu

Wanli Yang

Tianning Zhang

Xin Chen

Ning Dai

Format Sitasi

APA MLA BibTeX

Xu, P., Huang, T., Li, Q., Wu, Z., Yang, W., Zhang, T. et al. (2026). Amorphous Ga2O3 and Temperature‐Tolerant Solar‐Blind Ultraviolet Photodetectors for Extreme Environments. https://doi.org/10.1002/aelm.202500603

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Informasi Jurnal

Tahun Terbit: 2026
Sumber Database: DOAJ
DOI: 10.1002/aelm.202500603
Akses: Open Access ✓