Strain‐Driven Electric Field Control of Magnetization in FeGa/PMN‐PT

Abstract Magnetoelectric materials are one of the potential candidates that can counter the growing need of low‐power memory and spintronic devices due to their ability to electrically control magnetic states. Manipulation of a magnetic state with the sole use of an electric field has faced several challenges like volatility and non‐reproducibility. Here, we propose a magnetostrictive FeGa thin film interfaced with a relaxor ferroelectric substrate (PMN‐PT) having a [011] surface cut. The polarization rotation is controlled near the coercive electric fields and stabilized at remanence, which generates distinct strained states. This strain transfers to the FeGa layer mechanically, inducing a net rotation of magnetization without the need of any bias magnetic field applicators. Imaging of the magnetic domains reveals spatial and real‐time information about its variation and adds insight on the modification of magnetic anisotropy. The newly created magnetic information can be erased by reaching ferroelectric saturation and subsequently regenerated through specific electrical pulses. These results demonstrate the possibility of manipulating the magnetization via controlled polarization rotation, for use in strain‐driven magneto‐electronics.