DOAJ Open Access 2025

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator

Josef Stevanus Matondang Nikhilendu Tiwary Glenn Ross Mervi Paulasto‐Kröckel

Abstrak

Abstract Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while being an excellent electrical insulator. This study reports AlN films grown using reactive magnetron sputtering, atomic layer deposition (ALD), and metalorganic vapour phase epitaxy (MOVPE) on Si (111) substrates. The strongly oriented MOVPE film has a thermal conductivity of 191 W m−1 K−1 and thermal boundary conductance (TBC) of 147 MW m−2 K−1. Modified Williamson‐Hall (W‐H) plot can provide grain size analysis for these highly oriented films to monitor the expected thermal conductivity. This study shows the feasibility of reactively sputtered and MOVPE AlN films as an integrated cross‐plane heat spreader in our AlN‐SOI platform.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (4)

Josef Stevanus Matondang

Nikhilendu Tiwary

Glenn Ross

Mervi Paulasto‐Kröckel

Format Sitasi

APA MLA BibTeX

Matondang, J.S., Tiwary, N., Ross, G., Paulasto‐Kröckel, M. (2025). Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator. https://doi.org/10.1002/aelm.202500175

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Informasi Jurnal

Tahun Terbit: 2025
Sumber Database: DOAJ
DOI: 10.1002/aelm.202500175
Akses: Open Access ✓