Chiral Magnetic Memory Device at the 10 Nm Scale Using Self‐Assembly Nano Floret Electrodes

Abstract As data storage demands increase, the need for highly dense memory solutions becomes crucial. Magnetic nanostructures offer a pathway to achieve dense memory devices, but standard magnetic memory bit sizes are limited to over 50 nm due to fundamental ferromagnetic properties. In this study, a 10 nm chiral magnetic memory device is introduced using a self‐assembly gold nano‐floret device. The device is composed of a SiGe nanowire with a selectively decorated gold metallic shell deposited at the nanowire tip. The tip with the thiol linkers functions as a weak ferromagnet particle that is stabilized by the chiral ligands. The nano‐floret functions as a high geometrical aspect ratio electrode measuring 30–60 nm in diameter and 1–10 microns in length. The mechanical contact of the Au with a counter Ti electrode forms a nanojunction that can be probed electrically, bridging the gap between the nanoscale and the microscale. In this junction, chiral molecules are adsorbed together with 10 nm super‐paramagnetic iron oxide nanoparticles (SPIONs) forming a magnetic memory device. The same device provides valuable insights into the chiral monolayer properties on selected metal surfaces demonstrating a new approach for characterizing the molecular tilt angle in monolayers of chiral molecules.