Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces
Abstrak
Abstract Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers degrades the performance. Self‐heating is a critical problem for high‐power, high‐frequency, wide bandgap, and ultra‐wide bandgap devices as well. Diamond, known for its exceptional thermal conductivity, offers a viable solution in both these cases. Since thermal boundary resistance (between the channel/junction and diamond plays a crucial role in overall thermal resistance, this study investigates various dielectrics for interface engineering, such as Silicon dioxide (SiO2), amorphous‐ Silicon Carbide (a‐SiC), and Silicon Nitride (SiNx), to make a phonon bridge at gallium nitride (GaN)‐diamond and Si‐diamond interfaces. The a‐SiC interlayer reduces diamond/GaN (<5 m2K per GW) and diamond/Si (<2 m2K per GW) thermal boundary resistances by linking low‐ and high‐frequency phonons, boosting phonon transport through the interface. Engineered interfaces enhance heat spreading from the channel/junction and rule out premature failure.
Topik & Kata Kunci
Penulis (24)
Mohamadali Malakoutian
Kelly Woo
Dennis Rich
Ramandeep Mandia
Xiang Zheng
Anna Kasperovich
Devansh Saraswat
Rohith Soman
Youhwan Jo
Thomas Pfeifer
Taesoon Hwang
Henry Aller
Jeongkyu Kim
Junrui Lyu
Janelle Keionna Mabrey
Thomas Andres Rodriguez
James Pomeroy
Patrick E. Hopkins
Samuel Graham
David J. Smith
Subhasish Mitra
Kyeongjae Cho
Martin Kuball
Srabanti Chowdhury
Akses Cepat
- Tahun Terbit
- 2025
- Sumber Database
- DOAJ
- DOI
- 10.1002/aelm.202400146
- Akses
- Open Access ✓