DOAJ Open Access 2024

Charge Transport in Blue Quantum Dot Light‐Emitting Diodes

Shuxin Li Wenxin Lin Haonan Feng Paul W. M. Blom Jiangxia Huang +7 lainnya

Abstrak

Abstract Although quantum dot light‐emitting diodes (QLEDs) are extensively studied nowadays, their charge transport mechanism remains a subject of ongoing debate. Here, the hole transport in blue quantum dots (QDs) (CdZnSe/ZnSe/ZnS/CdZnS/ZnS based) is investigated by combining current‐voltage and transient electroluminescence measurements. The study demonstrates that the hole transport in QD thin films is characterized by a trap‐free space‐charge‐limited current with a zero‐field room temperature mobility of 4.4 × 10−11 m2 V−1 s−1. The zero‐field hole mobility is thermally activated with an activation energy of 0.30 eV. Applying the Extended Gaussian Disorder model provides a consistent description of the QD hole current as a function of voltage and temperature. The QD hole mobility is characterized by a hopping distance of 2.8 nm in a Gaussian broadened density of states with a width of 0.12 eV.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (12)

Shuxin Li

Wenxin Lin

Haonan Feng

Paul W. M. Blom

Jiangxia Huang

Jiahao Li

Xiongfeng Lin

Yulin Guo

Wenlin Liang

Longjia Wu

Quan Niu

Yuguang Ma

Format Sitasi

APA MLA BibTeX

Li, S., Lin, W., Feng, H., Blom, P.W.M., Huang, J., Li, J. et al. (2024). Charge Transport in Blue Quantum Dot Light‐Emitting Diodes. https://doi.org/10.1002/aelm.202400142

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Informasi Jurnal

Tahun Terbit: 2024
Sumber Database: DOAJ
DOI: 10.1002/aelm.202400142
Akses: Open Access ✓