DOAJ Open Access 2024

Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics

Yunwoo Shin Jaemin Son Juhee Jeon Seungho Ryu Kyoungah Cho +1 lainnya

Abstrak

Abstract In this study, a triple‐gated transistor with a p+‐i‐n+ silicon nanosheet (NS) is proposed as a single synaptic device, and bidirectional synaptic functions are realized using reconfigurable memory characteristics. The triple‐gated NS transistor features steep switching and bistable characteristics with a subthreshold swing below 5 mV dec−1 and an ON/OFF current ratio of ≈5 × 106 for both the n‐ and p‐channel modes. This transistor exhibits electrically symmetric reconfigurable memory characteristics with an ON current ratio of 1.02 for the n‐ and p‐channel modes. Moreover, the bidirectional synaptic weight updates of binarized spike‐timing‐dependent plasticity learning are successfully performed in a single transistor. This study demonstrates the potential of a triple‐gated NS transistor for achieving compact synaptic arrays in large‐scale silicon‐based neuromorphic computing systems.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (6)

Yunwoo Shin

Jaemin Son

Juhee Jeon

Seungho Ryu

Kyoungah Cho

Sangsig Kim

Format Sitasi

APA MLA BibTeX

Shin, Y., Son, J., Jeon, J., Ryu, S., Cho, K., Kim, S. (2024). Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics. https://doi.org/10.1002/aelm.202300764

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Informasi Jurnal

Tahun Terbit: 2024
Sumber Database: DOAJ
DOI: 10.1002/aelm.202300764
Akses: Open Access ✓