DOAJ Open Access 2024

Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes

Hesham Okeil Tobias Erlbacher Gerhard Wachutka

Abstrak

Abstract In this study ion‐implanted lateral 4H‐SiC pin diodes are reported, which show an unexpectedly high room temperature in‐plane magnetic field sensitivity approaching 100 % at 0.5 Tesla. Using dedicated TCAD simulations the underlying transduction mechanism is studied, and the effect of implantation‐induced carrier traps on the observed high sensitivity is unraveled. The study shows how such traps can greatly control the injection conditions at the highly doped implant regions providing a plausible explanation for an observed portion in the IV‐characteristics of the pin diodes exhibiting the aforementioned high magnetic field sensitivity.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (3)

Hesham Okeil

Tobias Erlbacher

Gerhard Wachutka

Format Sitasi

APA MLA BibTeX

Okeil, H., Erlbacher, T., Wachutka, G. (2024). Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes. https://doi.org/10.1002/aelm.202300531

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Informasi Jurnal

Tahun Terbit: 2024
Sumber Database: DOAJ
DOI: 10.1002/aelm.202300531
Akses: Open Access ✓