Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors
Abstrak
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on‐current and off‐current tradeoff for two populations of semiconducting‐enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side‐bonded contact. A method to enhance the performance of low‐leakage CNFETs is demonstrated using sub‐monolayer self‐aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post‐fabrication with no change in electrical behaviors.
Topik & Kata Kunci
Penulis (17)
Hsin‐Yuan Chiu
Tzu‐Ang Chao
Nathaniel S. Safron
Sheng‐Kai Su
San‐Lin Liew
Wei‐Sheng Yun
Po‐Sen Mao
Yu‐Tung Lin
Vincent Duen‐Huei Hou
Tung‐Ying Lee
Wen‐Hao Chang
Matthias Passlack
Hon‐Sum Philip Wong
Iuliana P. Radu
Han Wang
Gregory Pitner
Chao‐Hsin Chien
Akses Cepat
- Tahun Terbit
- 2024
- Sumber Database
- DOAJ
- DOI
- 10.1002/aelm.202300519
- Akses
- Open Access ✓