Asynchronous Charge Carrier Injection in Perovskite Light‐Emitting Transistors

Abstract Unbalanced mobility and injection of charge carriers in metal‐halide perovskite light‐emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead iodide light‐emitting transistors has proven effective in increasing the brightness of light emission up to MHz frequencies. In this work, a new approach is developed to improve charge carrier injection and enhance electroluminescence of perovskite light‐emitting transistors by independent control of drain–source and gate–source bias voltages to compensate for space‐charge effects. Optimization of bias pulse synchronization induces a fourfold enhancement of the emission intensity. Interestingly, the optimal phase delay between biasing pulses depends on modulation frequency due to the capacitive nature of the devices, which is well captured by numerical simulations of an equivalent electrical circuit. These results provide new insights into the electroluminescence dynamics of AC‐driven perovskite light‐emitting transistors and demonstrate an effective strategy to optimize device performance through independent control of the amplitude, frequency, and phase of the biasing pulses.