DOAJ Open Access 2023

Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors

Amine Slassi Linda‐Sheila Medondjio Andrea Padovani Francesco Tavanti Xu He +6 lainnya

Abstrak

Abstract The choice of the ideal material employed in selector devices is a tough task both from the theoretical and experimental side, especially due to the lack of a synergistic approach between techniques able to correlate specific material properties with device characteristics. Using a material‐to‐device multiscale technique, a reliable protocol for an efficient characterization of the active traps in amorphous GeSe chalcogenide is proposed. The resulting trap maps trace back the specific features of materials responsible for the measured findings, and connect them to an atomistic description of the sample. The metrological approach can be straightforwardly extended to other materials and devices, which is very beneficial for an efficient material‐device codesign and the optimization of novel technologies.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (11)

Amine Slassi

Linda‐Sheila Medondjio

Andrea Padovani

Francesco Tavanti

Xu He

Sergiu Clima

Daniele Garbin

Ben Kaczer

Luca Larcher

Pablo Ordejón

Arrigo Calzolari

Format Sitasi

APA MLA BibTeX

Slassi, A., Medondjio, L., Padovani, A., Tavanti, F., He, X., Clima, S. et al. (2023). Device‐to‐Materials Pathway for Electron Traps Detection in Amorphous GeSe‐Based Selectors. https://doi.org/10.1002/aelm.202201224

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Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1002/aelm.202201224
Akses: Open Access ✓