DOAJ Open Access 2023

In Situ/Operando Studies for Reduced Eletromigration in Ag Nanowires with Stacking Faults

Yu‐Hsiang Hsueh Ashok Ranjan Lian‐Ming Lyu Kai‐Yuan Hsiao Yu‐Cheng Chang +2 lainnya

Abstrak

Abstract In this study, the effect of stacking faults (SFs) on electromigration in silver nanowires (AgNWs) in particular, with respect to their effects on necking and void growth, is investigated. The galvanic replacement reaction is used to synthesize the AgNWs in bulk at low cost. By varying the concentration of silver nitrate, AgNWs are obtained with and without SFs. In situ TEM analysis provides strong evidence that the SFs can effectively suppress the migration of surface atoms. Furthermore, an investigation of the void growth process reveals that SF facets parallel to the {111} plane contribute to the anisotropic change in morphology and slow down the rate of void growth by 135 times. Thus, planar defects can be beneficial to extending the lifetimes of devices by causing intrinsic changes to the material properties.

Topik & Kata Kunci

Electric apparatus and materials. Electric circuits. Electric networks Physics

Penulis (7)

Yu‐Hsiang Hsueh

Ashok Ranjan

Lian‐Ming Lyu

Kai‐Yuan Hsiao

Yu‐Cheng Chang

Ming‐Pei Lu

Ming‐Yen Lu

Format Sitasi

APA MLA BibTeX

Hsueh, Y., Ranjan, A., Lyu, L., Hsiao, K., Chang, Y., Lu, M. et al. (2023). In Situ/Operando Studies for Reduced Eletromigration in Ag Nanowires with Stacking Faults. https://doi.org/10.1002/aelm.202201054

Akses Cepat

PDF tidak tersedia langsung

Cek di sumber asli →

Lihat di Sumber doi.org/10.1002/aelm.202201054

Informasi Jurnal

Tahun Terbit: 2023
Sumber Database: DOAJ
DOI: 10.1002/aelm.202201054
Akses: Open Access ✓