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CrossRef Open Access 2016 4 sitasi

Impact of GeO<sub>2</sub> passivation layer quality on band alignment at GeO<sub>2</sub>/Ge interface studied by internal photoemission spectroscopy

Wenfeng Zhang Tomonori Nishimura Akira Toriumi
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Abstrak

Abstract We report on the GeO2 quality dependence of the band alignment at the GeO2/Ge interface studied by internal photoemission spectroscopy. Two kinds of Au/GeO2/Ge capacitor with similar GeO2/Ge interfaces but distinct GeO2 bulk properties were compared. The conduction band offset at the GeO2/Ge interface was revealed to be insensitive to GeO2 bulk properties, while a high density of states (DOS) near the conduction band edge of GeO2 was found to depend on GeO2 quality. Such DOS elimination led to leakage current suppression and electron mobility enhancement in Ge n-channel MOSFETs with improved GeO2 quality.

Penulis (3)

W

Wenfeng Zhang

T

Tomonori Nishimura

A

Akira Toriumi

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APA MLA BibTeX
Zhang, W., Nishimura, T., Toriumi, A. (2016). Impact of GeO<sub>2</sub> passivation layer quality on band alignment at GeO<sub>2</sub>/Ge interface studied by internal photoemission spectroscopy. https://doi.org/10.7567/apex.9.024201

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Lihat di Sumber doi.org/10.7567/apex.9.024201
Informasi Jurnal
Tahun Terbit
2016
Bahasa
en
Total Sitasi
4×
Sumber Database
CrossRef
DOI
10.7567/apex.9.024201
Akses
Open Access ✓