Thin Film Polycrystalline Si by Cs Solution Growth Technique
Abstrak
ABSTRACTA deposition process has been developed which allows the growth of large grain (20+μm) polysilicon films on SiO2substrates at a growth temperature of 650° C. A thin layer of liquid Si-metal solution is formed on the substrate surface as the growth medium. This layer is kept saturated by Si flux from a DC magnetron sputter gun. XRD analysis of the deposited films show a strong (111) preferred orientation, with increasing integrated peak intensities with increasing depositon temperature and solution layer thickness. Films deposited using an In-Si solution are p-type, with carrier concentrations in the mid 1016cm−3range. Conductivities of ∼.2 (Ω cm)−1were measured, with activation energies for both carrier generation and conductivity of about 135meV. The hole mobility was found to be ∼ 30 cm2V−1s−1. A wetting layer is used which may have a detrimental effect on the minority carrier lifetime.
Penulis (3)
Richard L. Wallace
Wayne A. Anderson
K. M. Jones
Akses Cepat
- Tahun Terbit
- 1994
- Bahasa
- en
- Total Sitasi
- 1×
- Sumber Database
- CrossRef
- DOI
- 10.1557/proc-358-883
- Akses
- Open Access ✓