Coupled Diffusion Equation Solutions To Ag/Ge (L 11) And Cs/Si (100) Interactions
Abstrak
ABSTRACTSurface diffusion has been studied in the Ag/Ge (111) and Cs/Si (100) systems using UHV-SEM based techniques, biassed secondary electron imaging (b-SEI), Micro-AES and RHEED. Ag and Cs were deposited through a mask of holes held close to the substrate at room temperature, and annealed at higher temperatures Ta. Under certain conditions, the Ag and Cs patches split into two distinct regions with different sub-Monolayer (ML) coverages θ, observable using b-SEI; the sensitivity for Cs/Si (100) is below 0.5% ML. These patch widths were measured as f(ø,Ta,t), and effective diffusion coefficients extracted. Both systems were modelled using coupled diffusion equations, involving adatoms in two different surface phases. Comparison with experiment yields activation energies for adsorption (Ea) and diffusion (Ed).
Penulis (5)
J. A. Venables
R. Persaud
F. L. Metcalfe
R. H. Milne
M. Azim
Akses Cepat
- Tahun Terbit
- 1993
- Bahasa
- en
- Sumber Database
- CrossRef
- DOI
- 10.1557/proc-317-83
- Akses
- Open Access ✓