CrossRef Open Access 1998 2 sitasi

Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO<sub>2</sub> Etching

Shigenori Hayashi Michinari Yamanaka Masafumi Kubota Mototsugu Ogura

Lihat Sumber DOI

Abstrak

Fluorocarbon CF x (x=1, 2) radicals in an inductively coupled plasma (ICP) have been measured using a spatially and temporally resolved laser-induced fluorescence (LIF) technique. Hollow profiles in the radial and axial distributions for the radicals in C4F8 ICPs, in contrast to uniform radial profiles near the substrate, suggest a destructive character within the ICP bulk and a small surface loss probability on the chamber wall. Temporal change of the CF2 radical distribution in the afterglow ICP was found to be dominated by the slow diffusion and wall-reflection processes.

Penulis (4)

Shigenori Hayashi

Michinari Yamanaka

Masafumi Kubota

Mototsugu Ogura

Format Sitasi

APA MLA BibTeX

Hayashi, S., Yamanaka, M., Kubota, M., Ogura, M. (1998). Spatial and Temporal Behavior of Radicals in Inductively Coupled Plasm for SiO<sub>2</sub> Etching. https://doi.org/10.1143/jjap.37.6922

Akses Cepat

Lihat di Sumber doi.org/10.1143/jjap.37.6922

Informasi Jurnal

Tahun Terbit: 1998
Bahasa: en
Total Sitasi: 2×
Sumber Database: CrossRef
DOI: 10.1143/jjap.37.6922
Akses: Open Access ✓