Beranda Pencarian Formation of a broad photoluminescence band from <inline-formula><math display="inline" overflow="scroll"><msup><mi mathvariant="normal">Si</mi><mo>+</mo></msup></math></inline-formula>-implanted <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> films by varying the heating rate of rapid thermal annealing

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Formation of a broad photoluminescence band from <inline-formula><math display="inline" overflow="scroll"><msup><mi mathvariant="normal">Si</mi><mo>+</mo></msup></math></inline-formula>-implanted <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> films by varying the heating rate of rapid thermal annealing

Jen-Hwan Tsai

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Jen-Hwan Tsai

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Tsai, J. (2010). Formation of a broad photoluminescence band from <inline-formula><math display="inline" overflow="scroll"><msup><mi mathvariant="normal">Si</mi><mo>+</mo></msup></math></inline-formula>-implanted <inline-formula><math display="inline" overflow="scroll"><mrow><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math></inline-formula> films by varying the heating rate of rapid thermal annealing. https://doi.org/10.1117/1.3461964

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Tahun Terbit: 2010
Bahasa: en
Total Sitasi: 1×
Sumber Database: CrossRef
DOI: 10.1117/1.3461964
Akses: Terbatas