CrossRef 2002 3 sitasi

Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs+

R. G. Musket M. Balooch

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Abstrak

Silicon surfaces having native oxides were implanted with 3 keV Cs+ ions and annealed. Implanted doses of 1, 1.7, and 3×1016 Cs/cm2 led to room-temperature work functions with stable, reproducible values of 2.3±0.15 eV after vacuum annealing at 100–560 °C. The resulting surfaces have been characterized with regard to the amount of Cs retained, the thermal and environmental stability of the work function, and the composition and chemistry of the implanted layer. The surface layers consisted of a compound of Si–Cs–O, which is compositionally stable to temperatures of ∼400 °C in vacuum. In addition, we found that these surfaces are stable with regard to exposures to background gases and ambient air.

Penulis (2)

R. G. Musket

M. Balooch

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APA MLA BibTeX

Musket, R.G., Balooch, M. (2002). Creation of stable, low work function surfaces on Si by implantation of 3 keV Cs+. https://doi.org/10.1116/1.1517259

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Lihat di Sumber doi.org/10.1116/1.1517259

Informasi Jurnal

Tahun Terbit: 2002
Bahasa: en
Total Sitasi: 3×
Sumber Database: CrossRef
DOI: 10.1116/1.1517259
Akses: Terbatas