Beranda Pencarian Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, Energy Delay, and Parasitic Effects

CrossRef Open Access 2019 16 sitasi

Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, Energy Delay, and Parasitic Effects

Shuo Zhang Jun Z. Huang Afshan Khaliq Hao Xie Wenchao Chen +1 lainnya

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Shuo Zhang

Jun Z. Huang

Afshan Khaliq

Hao Xie

Wenchao Chen

Wen-Yan Yin

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Zhang, S., Huang, J.Z., Khaliq, A., Xie, H., Chen, W., Yin, W. (2019). Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, <inline-formula> <tex-math notation="LaTeX">${C}$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">${V}$ </tex-math> </inline-formula>, Energy Delay, and Parasitic Effects. https://doi.org/10.1109/ted.2018.2881160

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Informasi Jurnal

Tahun Terbit: 2019
Bahasa: en
Total Sitasi: 16×
Sumber Database: CrossRef
DOI: 10.1109/ted.2018.2881160
Akses: Open Access ✓