CrossRef
Open Access
2018
18 sitasi
Modeling of DG MOSFET <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Characteristics in the Saturation Region
Yuan Taur
Huang-Hsuan Lin
Penulis (2)
Y
Yuan Taur
H
Huang-Hsuan Lin
Format Sitasi
Taur, Y., Lin, H. (2018). Modeling of DG MOSFET <inline-formula>
<tex-math notation="LaTeX">$I$ </tex-math>
</inline-formula>–<inline-formula>
<tex-math notation="LaTeX">$V$ </tex-math>
</inline-formula> Characteristics in the Saturation Region. https://doi.org/10.1109/ted.2018.2818943
Akses Cepat
Informasi Jurnal
- Tahun Terbit
- 2018
- Bahasa
- en
- Total Sitasi
- 18×
- Sumber Database
- CrossRef
- DOI
- 10.1109/ted.2018.2818943
- Akses
- Open Access ✓