Beranda Pencarian A New MOS Capacitance Correction Method Based on Five-Element Model by Combining Double-Frequency <inline-formula> <tex-math notation="LaTeX">${C}-{V}$ </tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Measurements

CrossRef Open Access 2016 6 sitasi

A New MOS Capacitance Correction Method Based on Five-Element Model by Combining Double-Frequency <inline-formula> <tex-math notation="LaTeX">${C}-{V}$ </tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Measurements

Xizhen Zhang Chuanhui Cheng Huichao Zhu Tao Yu Daming Zhang +1 lainnya

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Penulis (6)

Xizhen Zhang

Chuanhui Cheng

Huichao Zhu

Tao Yu

Daming Zhang

Baojiu Chen

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Zhang, X., Cheng, C., Zhu, H., Yu, T., Zhang, D., Chen, B. (2016). A New MOS Capacitance Correction Method Based on Five-Element Model by Combining Double-Frequency <inline-formula> <tex-math notation="LaTeX">${C}-{V}$ </tex-math> </inline-formula> and <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Measurements. https://doi.org/10.1109/led.2016.2604247

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Tahun Terbit: 2016
Bahasa: en
Total Sitasi: 6×
Sumber Database: CrossRef
DOI: 10.1109/led.2016.2604247
Akses: Open Access ✓