Beranda Pencarian Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous <inline-formula> <tex-math notation="TeX">\(f_{t}\) </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">\(f_{\textrm {max}}\) </tex-math></inline-formula> of Over 500 GHz

CrossRef Open Access 2014 15 sitasi

Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous <inline-formula> <tex-math notation="TeX">\(f_{t}\) </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">\(f_{\textrm {max}}\) </tex-math></inline-formula> of Over 500 GHz

Norihide Kashio Takuya Hoshi Kenji Kurishima Minoru Ida Hideaki Matsuzaki

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Norihide Kashio

Takuya Hoshi

Kenji Kurishima

Minoru Ida

Hideaki Matsuzaki

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Kashio, N., Hoshi, T., Kurishima, K., Ida, M., Matsuzaki, H. (2014). Composition- and Doping-Graded-Base InP/InGaAsSb Double Heterojunction Bipolar Transistors Exhibiting Simultaneous <inline-formula> <tex-math notation="TeX">\(f_{t}\) </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">\(f_{\textrm {max}}\) </tex-math></inline-formula> of Over 500 GHz. https://doi.org/10.1109/led.2014.2365216

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Tahun Terbit: 2014
Bahasa: en
Total Sitasi: 15×
Sumber Database: CrossRef
DOI: 10.1109/led.2014.2365216
Akses: Open Access ✓