Beranda Pencarian Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$V_{\rm DD}=0.5~{\rm V}$ </tex-math></inline-formula>

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Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$V_{\rm DD}=0.5~{\rm V}$ </tex-math></inline-formula>

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(2014). Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="TeX">$I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="TeX">$V_{\rm DD}=0.5~{\rm V}$ </tex-math></inline-formula>. https://doi.org/10.1109/led.2014.2317146

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Tahun Terbit: 2014
Bahasa: en
Total Sitasi: 23×
Sumber Database: CrossRef
DOI: 10.1109/led.2014.2317146
Akses: Open Access ✓