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CrossRef Open Access 2010 5 sitasi

Fin Width $(W_{\rm fin})$ Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device

Sung-Jin Choi Jin-Woo Han Dong-Il Moon Moongyu Jang Yang-Kyu Choi
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Penulis (5)

S

Sung-Jin Choi

J

Jin-Woo Han

D

Dong-Il Moon

M

Moongyu Jang

Y

Yang-Kyu Choi

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Choi, S., Han, J., Moon, D., Jang, M., Choi, Y. (2010). Fin Width $(W_{\rm fin})$ Dependence of Programming Characteristics on a Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS Device for a NOR-Type Flash Memory Device. https://doi.org/10.1109/led.2009.2035142

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Informasi Jurnal
Tahun Terbit
2010
Bahasa
en
Total Sitasi
5×
Sumber Database
CrossRef
DOI
10.1109/led.2009.2035142
Akses
Open Access ✓