Beranda Pencarian Electronic Properties of a-SiO<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">${}_{y}$</tex-math> </inline-formula>:H/SiN<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula> Stacks for Surface Passivation of P-Type Crystalline Si Wafers

CrossRef Open Access 2016 7 sitasi

Electronic Properties of a-SiO<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">${}_{y}$</tex-math> </inline-formula>:H/SiN<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula> Stacks for Surface Passivation of P-Type Crystalline Si Wafers

Xuemei Cheng Halvard Haug Marisa Di Sabatino Junjie Zhu Erik Stensrud Marstein

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Xuemei Cheng

Halvard Haug

Marisa Di Sabatino

Junjie Zhu

Erik Stensrud Marstein

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Cheng, X., Haug, H., Sabatino, M.D., Zhu, J., Marstein, E.S. (2016). Electronic Properties of a-SiO<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula>N<inline-formula> <tex-math notation="LaTeX">${}_{y}$</tex-math> </inline-formula>:H/SiN<inline-formula> <tex-math notation="LaTeX">${}_{x}$</tex-math> </inline-formula> Stacks for Surface Passivation of P-Type Crystalline Si Wafers. https://doi.org/10.1109/jphotov.2016.2581421

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Informasi Jurnal

Tahun Terbit: 2016
Bahasa: en
Total Sitasi: 7×
Sumber Database: CrossRef
DOI: 10.1109/jphotov.2016.2581421
Akses: Open Access ✓