Operation of Cs–Sb–O activated GaAs in a high voltage DC electron gun at high average current
Abstrak
Negative Electron Affinity (NEA) activated GaAs photocathodes are the most popular option for generating a high current (>1 mA) spin-polarized electron beam. Despite its popularity, a short operational lifetime is the main drawback of this material. Recent works have shown that the lifetime can be improved by using a robust Cs–Sb–O NEA layer with minimal adverse effects. In this work, we operate GaAs photocathodes with this new activation method in a high voltage environment to extract a high current. We demonstrate that improved chemical resistance of Cs–Sb–O activated GaAs photocathodes allowed them to survive a day-long transport process from a separate vacuum system using a vacuum suitcase. During beam running, we observed spectral dependence on lifetime improvement. In particular, we saw a 45% increase in the lifetime at 780 nm on average for Cs–Sb–O activated GaAs compared to Cs–O activated GaAs.
Penulis (7)
Jai Kwan Bae
Matthew Andorf
Adam Bartnik
Alice Galdi
Luca Cultrera
Jared Maxson
Ivan Bazarov
Akses Cepat
- Tahun Terbit
- 2022
- Bahasa
- en
- Total Sitasi
- 12×
- Sumber Database
- CrossRef
- DOI
- 10.1063/5.0100794
- Akses
- Open Access ✓