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Characterization of Nitrogen Content/Distribution in SiON Gate Dielectrics using Angle-Resolved X-Ray Photoelectron Spectroscopy (AR-XPS) and Aberration Corrected Scanning Transmission Electron Spectroscopy (Cs-STEM)

C Lazik G Conti Y Uritsky

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C Lazik

G Conti

Y Uritsky

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Lazik, C., Conti, G., Uritsky, Y. (2007). Characterization of Nitrogen Content/Distribution in SiON Gate Dielectrics using Angle-Resolved X-Ray Photoelectron Spectroscopy (AR-XPS) and Aberration Corrected Scanning Transmission Electron Spectroscopy (Cs-STEM). https://doi.org/10.1017/s1431927607075113

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Tahun Terbit: 2007
Bahasa: en
Sumber Database: CrossRef
DOI: 10.1017/s1431927607075113
Akses: Terbatas