CrossRef Open Access 1989

Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment

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(1989). Secondary ion yield changes in Si and GaAs due to topography changes during O+2 or Cs+ ion bombardment. https://doi.org/10.1016/0042-207x(89)90855-5

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Informasi Jurnal

Tahun Terbit: 1989
Bahasa: en
Sumber Database: CrossRef
DOI: 10.1016/0042-207x(89)90855-5
Akses: Open Access ✓