Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon

Hussein, M.J., Yunus, W.M.M., Kamari, H.M., Zakaria, A., Oleiw, H.F. (2016). Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon. https://doi.org/10.1007/s11082-016-0476-3

Hussein, Mohammed Jabbar, et al.. "Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon". CrossRef, 2016. doi:10.1007/s11082-016-0476-3.

@article{hussein2016, author = {Mohammed Jabbar Hussein and W. Mahmood Mat Yunus and Halimah Mohamed Kamari and Azmi Zakaria and Hind Fadhil Oleiw}, title = {Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon}, year = {2016}, journal = {CrossRef}, doi = {10.1007/s11082-016-0476-3}, url = {https://doi.org/10.1007/s11082-016-0476-3}, }

Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon

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