CrossRef Open Access 2012 10 sitasi

The secondary ions emission from Si under low‐energy Cs bombardment in a presence of oxygen

A. Merkulov

Abstrak

Secondary negative ions yields of elements in the III rd , IV th , V th periodic table groups emitted under Cs + bombardment of Si surface in presence of oxygen are reported. The ion yield variation on oxygen partial pressure in the analytical chamber obtained for different ions allows taking a step forward the development of secondary ion emission model. The ion yield enhancement under particular oxygen surface coverage offers an approach for quantitative analysis of ultra‐shallow semiconductor structures and interfaces. Copyright © 2012 John Wiley & Sons, Ltd.

Penulis (1)

A. Merkulov

Format Sitasi

APA MLA BibTeX

Merkulov, A. (2012). The secondary ions emission from Si under low‐energy Cs bombardment in a presence of oxygen. https://doi.org/10.1002/sia.5132

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Informasi Jurnal

Tahun Terbit: 2012
Bahasa: en
Total Sitasi: 10×
Sumber Database: CrossRef
DOI: 10.1002/sia.5132
Akses: Open Access ✓