arXiv Open Access 1998

Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

S. V. Kravchenko D. Simonian M. P. Sarachik

Lihat Sumber

Abstrak

In a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an explanation of the sharp decrease in resistivity at low temperatures which has been attributed to a transition to an unexpected conducting phase in dilute high-mobility two-dimensional systems at B=0. In this Comment, we examine whether their model is supported by the available experimental data.

Topik & Kata Kunci

cond-mat.str-el

Penulis (3)

S. V. Kravchenko

D. Simonian

M. P. Sarachik

Format Sitasi

APA MLA BibTeX

Kravchenko, S.V., Simonian, D., Sarachik, M.P. (1998). Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216). https://arxiv.org/abs/cond-mat/9812331

Akses Cepat

Lihat di Sumber

Informasi Jurnal

Tahun Terbit: 1998
Bahasa: en
Sumber Database: arXiv
Akses: Open Access ✓