arXiv Open Access 2006

Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]

S. Bandyopadhyay M. Cahay

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Abstrak

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current than a comparable metal oxide semiconductor field effect transistor (MOSFET). Here, we show that all three claims of HF are invalid.

Topik & Kata Kunci

cond-mat.mes-hall

Penulis (2)

S. Bandyopadhyay

M. Cahay

Format Sitasi

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Bandyopadhyay, S., Cahay, M. (2006). Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]. https://arxiv.org/abs/cond-mat/0604532

Akses Cepat

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Informasi Jurnal

Tahun Terbit: 2006
Bahasa: en
Sumber Database: arXiv
Akses: Open Access ✓