Thermodynamic Phase Stability, Structural, Mechanical, Optoelectronic, and Thermoelectric Properties of the III-V Semiconductor AlSb for Energy Conversion Applications

This study presents a first principles investigation of the structural, thermodynamic, electronic, optical and thermoelectric properties of aluminum antimonide (AlSb) in its cubic (F-43m) and hexagonal (P63mc) phases. Both structures are dynamically and mechanically stable, as confirmed by phonon calculations and the Born Huang criteria. The lattice constants obtained using the SCAN and PBEsol functionals show good agreement with experimental data. The cubic phase exhibits a direct band gap of 1.66 to 1.78 eV, while the hexagonal phase shows a band gap of 1.48 to 1.59 eV, as confirmed by mBJ and HSE06 calculations. Under external pressure, the band gap decreases in the cubic phase and increases in the hexagonal phase due to different s p orbital hybridization mechanisms. The optical absorption coefficient reaches 1e6 cm-1, which is comparable to or higher than values reported for other III V semiconductors. The Seebeck coefficient exceeds 1500 microV per K under intrinsic conditions, and the thermoelectric performance improves above 600 K due to enhanced phonon scattering and lattice anharmonicity. The calculated formation energies (-1.316 eV for F-43m and -1.258 eV for P63mc) confirm that the cubic phase is thermodynamically more stable. The hexagonal phase exhibits higher anisotropy and lower lattice stiffness, which is favorable for thermoelectric applications. These results demonstrate the strong interplay between crystal symmetry, phonon behavior and charge transport, and provide useful guidance for the design of AlSb based materials for optoelectronic and energy conversion technologies.