arXiv Open Access 2025

Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics

W. F. Holmes-Hewett J. D. Miller H. G. Ahmad S. Granville B. J. Ruck

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Abstrak

Driven by the pursuit of high-performance electronic devices, research into novel materials with properties appropriate for cryogenic applications has unveiled the exceptional properties of the rare-earth nitride series of intrinsic ferromagnetic semiconductors. Here we report on the field focusing on developments, since the most recent comprehensive review [1], which enable applications in cryogenic electronic devices.

Topik & Kata Kunci

cond-mat.mtrl-sci cond-mat.other

Penulis (5)

W. F. Holmes-Hewett

J. D. Miller

H. G. Ahmad

S. Granville

B. J. Ruck

Format Sitasi

APA MLA BibTeX

Holmes-Hewett, W.F., Miller, J.D., Ahmad, H.G., Granville, S., Ruck, B.J. (2025). Rare-Earth Nitrides: Fundamental Advances and Applications in Cryogenic Electronics. https://arxiv.org/abs/2505.15238

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Informasi Jurnal

Tahun Terbit: 2025
Bahasa: en
Sumber Database: arXiv
Akses: Open Access ✓