2T1R Regulated Memristor Conductance Control Array Architecture for Neuromorphic Computing using 28nm CMOS Technology

Memristors are promising devices for scalable and low power, in-memory computing to improve the energy efficiency of a rising computational demand. The crossbar array architecture with memristors is used for vector matrix multiplication (VMM) and acts as kernels in neuromorphic computing. The analog conductance control in a memristor is achieved by applying voltage or current through it. A basic 1T1R array is suitable to avoid sneak path issues but suffer from wire resistances, which affects the read and write procedures. A conductance control scheme with a regulated voltage source will improve the architecture and reduce the possible potential divider effects. A change in conductance is also possible with the provision of a regulated current source and measuring the voltage across the memristors. A regulated 2T1R memristor conductance control architecture is proposed in this work, which avoids the potential divider effect and virtual ground scenario in a regular crossbar scheme, as well as conductance control by passing a regulated current through memristors. The sneak path current is not allowed to pass by the provision of ground potential to both terminals of memristors.