Modeling PFAS in Semiconductor Manufacturing to Quantify Trade-offs in Energy Efficiency and Environmental Impact of Computing Systems

The electronics and semiconductor industry is a prominent consumer of per- and poly-fluoroalkyl substances (PFAS), also known as forever chemicals. PFAS are persistent in the environment and can bioaccumulate to ecological and human toxic levels. Computer designers have an opportunity to reduce the use of PFAS in semiconductors and electronics manufacturing, including integrated circuits (IC), batteries, displays, etc., which currently account for a staggering 10% of the total PFAS fluoropolymers usage in Europe alone. In this paper, we present a framework where we (1) quantify the environmental impact of PFAS in computing systems manufacturing with granular consideration of the metal layer stack and patterning complexities in IC manufacturing at the design phase, (2) identify contending trends between embodied carbon (carbon footprint due to hardware manufacturing) versus PFAS. For example, manufacturing an IC at a 7 nm technology node using EUV lithography uses 18% less PFAS-containing layers, compared to manufacturing the same IC at a 7 nm technology node using DUV immersion lithography (instead of EUV) unlike embodied carbon trends, and (3) conduct case studies to illustrate how to optimize and trade-off designs with lower PFAS, while meeting power-performance-area constraints. We show that optimizing designs to use less back-end-of-line (BEOL) metal stack layers can save 1.7$\times$ PFAS-containing layers in systolic arrays.