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arXiv Open Access 2024

Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale

Amadeusz Dydniański Aleksandra Łopion Mateusz Raczyński Tomasz Kazimierczuk Karolina Ewa Połczyńska +2 lainnya
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Abstrak

In this work, we study the impact of carrier localization on three quantities sensitive to carrier gas density at the micrometer scale: charged exciton (X+) oscillator strength, local free carrier conductivity, and the Knight shift. The last two are observed in a micrometer-scale, spatially resolved optically detected magnetic resonance experiment (ODMR). On the surface of MBE-grown (Cd,Mn)Te quantum well we identify defected areas in the vicinity of dislocations. We find that these areas show a much lower conductivity signal while maintaining the same Knight shift values as the pristine areas of the quantum well. We attribute this behavior to carrier localization in the defected regions.

Topik & Kata Kunci

cond-mat.mes-hall cond-mat.mtrl-sci

Penulis (7)

A

Amadeusz Dydniański

A

Aleksandra Łopion

M

Mateusz Raczyński

T

Tomasz Kazimierczuk

K

Karolina Ewa Połczyńska

W

Wojciech Pacuski

P

Piotr Kossacki

Format Sitasi

APA MLA BibTeX
Dydniański, A., Łopion, A., Raczyński, M., Kazimierczuk, T., Połczyńska, K.E., Pacuski, W. et al. (2024). Carrier localization in defected areas of (Cd, Mn)Te quantum well investigated via Optically Detected Magnetic Resonance employed in the microscale. https://arxiv.org/abs/2412.10075

Akses Cepat

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Tahun Terbit
2024
Bahasa
en
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arXiv
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Open Access ✓