Photoconductive receivers at 1030 nm for high average power pulsed THz detection

In the last few years, many advances have been made in the demonstration of high-average power pulsed THz sources; however, little effort has been made to study compatible sensitive field-resolved detectors. Here, we investigate ErAs:InAlGaAs photoconductive receivers optimized for a probe wavelength of 1030 nm and thus suitable for the new class of high-power ultrafast Ytterbium-based laser sources for THz generation and detection. The performance of the receiver is tested with a few-cycle THz source with high average power up to 20 mW and the dynamic range and saturation behavior of the receiver is thoroughly characterized. Under optimized settings, a dynamic range of more than 115 dB is reached in a 120 s measurement time with 20 mW of THz average power, which is among the highest reported values to date. By reviewing the state-of-the art in TDS measurement and post-processing technology, we identify current limitations and guidelines for further increasing the dynamic range towards 150 dB in short measurement times using high average power THz systems.