arXiv Open Access 2023

Useful Circuit Analogies to Model THz Field Effect Transistors

Adam Gleichman Kindred Griffis Sergey V. Baryshev

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Abstrak

The electron fluid model in plasmonic field effect transistor (FET) operation is related to the behavior of a radio-frequency (RF) cavity. This new understanding led to finding the relationships between physical device parameters and equivalent circuit components in traditional parallel resistor, inductor, and capacitor (RLC) and transmission models for cavity structures. Verification of these models is performed using PSpice to simulate the frequency dependent voltage output and compare with analytical equations for the drain potential as a function of frequency.

Topik & Kata Kunci

physics.app-ph physics.plasm-ph

Penulis (3)

Adam Gleichman

Kindred Griffis

Sergey V. Baryshev

Format Sitasi

APA MLA BibTeX

Gleichman, A., Griffis, K., Baryshev, S.V. (2023). Useful Circuit Analogies to Model THz Field Effect Transistors. https://arxiv.org/abs/2307.07488

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Informasi Jurnal

Tahun Terbit: 2023
Bahasa: en
Sumber Database: arXiv
Akses: Open Access ✓