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arXiv Open Access 2019

On Quantifying Large Lattice Relaxations in Photovoltaic Devices

Marco Nardone Yasas Patikirige Kyoung E. Kweon Curtis Walkons Theresa Magorian Friedlmeier +3 lainnya
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Abstrak

Temporal variations of Cu(In,Ga)Se$_2$ photovoltaic device properties during light exposure at various temperatures and voltage biases for times up to 100 h were analyzed using the kinetic theory of large lattice relaxations. Open-circuit voltage and p-type doping increased with charge injection and decreased with temperature at low injection conditions. Lattice relaxation can account for both trends and activation energies extracted from the data were approximately 0.9 and 1.2 eV for devices with lower and higher sodium content, respectively. In these devices, increased sodium content resulted in higher initial p-type doping with greater stability. First principles calculations providing revised activation energies for the ($V_{Se}-V_{Cu}$) complex suggest that this defect does not account for the metastability observed here.

Topik & Kata Kunci

physics.app-ph physics.comp-ph

Penulis (8)

M

Marco Nardone

Y

Yasas Patikirige

K

Kyoung E. Kweon

C

Curtis Walkons

T

Theresa Magorian Friedlmeier

J

Joel B. Varley

V

Vincenzo Lordi

S

Shubhra Bansal

Format Sitasi

APA MLA BibTeX
Nardone, M., Patikirige, Y., Kweon, K.E., Walkons, C., Friedlmeier, T.M., Varley, J.B. et al. (2019). On Quantifying Large Lattice Relaxations in Photovoltaic Devices. https://arxiv.org/abs/1911.04353

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Informasi Jurnal
Tahun Terbit
2019
Bahasa
en
Sumber Database
arXiv
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Open Access ✓